IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 6

• Manufacturer Part Number: IRFPS40N50LPBF
• Description: MOSFET N-CH 500V 46A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS40N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 8110pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 540000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 46A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPS40N50LPBF

Document Number: 91260
IRFPS40N50LPbF
Fig 14a. Unclamped Inductive Test Circuit
1000
Fig 15a. Gate Charge Test Circuit
100
10
1
Fig 12. Maximum Safe Operating
10
T
T
Single Pulse
C
J
12V
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
R G
V
20V
GS
V
V DS
DS
Same Type as D.U.T.
Current Regulator
°
.2µF
t p
, Drain-to-Source Voltage (V)
50KΩ
3mA
I AS
Current Sampling Resistors
Area
D.U.T
BY R
.3µF
0.01 Ω
L
I
G
100
DS(on)
D.U.T.
I
D
15V
+
-
V
DS
DRIVER
10us
100us
1ms
10ms
+
-
V DD
1000
A
2000
1500
1000
500
0
Fig 15b. Basic Gate Charge Waveform
25
Fig 14b. Unclamped Inductive Waveforms
V
Fig 13. Maximum Avalanche Energy
I
AS
GS
Starting T , Junction Temperature( C)
V
G
50
Q
vs. Drain Current
GS
J
t p
75
Q
Charge
Q
GD
G
V
(BR)DSS
100
TOP
BOTTOM
www.vishay.com
125
°
I D
21A
30A
46A
150
6