RP1E050RPTR Rohm Semiconductor, RP1E050RPTR Datasheet
RP1E050RPTR
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RP1E050RPTR Summary of contents
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Drive Pch MOSFET RP1E050RP Structure Silicon P-channel MOSFET Features 1) Low On-resistance. 2) High power package drive. Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) RP1E050RP Absolute maximum ratings (Ta ...
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RP1E050RP Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage V Static drain-source on-state R resistance Forward transistor admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on ...
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RP1E050RP Electrical characteristics curves 10 Ta=25°C Pulsed -10V -4. -4. -3. -2. -3. 0.2 0.4 ...
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RP1E050RP 200 Ta=25°C Pulsed 150 I = -5.0A D 100 -2. GATE-SOURCE VOLTAGE : -V GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ta=25°C Ciss f=1MHz V =0V GS ...
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RP1E050RP Measurement circuits D.U. Fig.1-1 Switching Time Measurement Circuit G(Const.) D.U. Fig.2-1 Gate Charge ...
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