RP1E050RPTR Rohm Semiconductor, RP1E050RPTR Datasheet - Page 3

• Manufacturer Part Number: RP1E050RPTR
• Description: MOSFET P-CH 30V 5A MPT6
• Manufacturer: Rohm Semiconductor

Specifications of RP1E050RPTR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 9.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 850pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: MPT6
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 58 mOhms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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 Electrical characteristics curves
RP1E050RP
1000
1000
100
100
10
10
10
8
6
4
2
0
Fig.4 Static Drain-Source On-State
0.1
0.1
Ta=25°C
Pulsed
0
V
Pulsed
Fig.7 Static Drain-Source On-State
GS
Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : -V
DRAIN-CURRENT : -I
= -4.0V
Resistance vs. Drain Current( Ⅰ)
0.2
DRAIN-CURRENT : -I
Resistance vs. Drain Current( Ⅳ)
V
GS
V
= -3.0V
0.4
GS
= -3.5V
1
1
0.6
V
V
V
Ta= -25°C
Ta=125°C
GS
GS
GS
V
Ta=75°C
Ta=25°C
D
= -4.0V
= -4.5V
= -10V
V
V
GS
[A]
V
GS
GS
= -2.5V
GS
Ta=25°C
Pulsed
D
[A]
= -4.5V
= -4.0V
0.8
= -10V
DS
[V]
10
10
1
1000
100
10
0.1
10
10
8
6
4
2
0
1
0.01
0
0.1
Fig.2 Typical Output Characteristics( Ⅱ)
V
Pulsed
V
Pulsed
Fig.5 Static Drain-Source On-State
DRAIN-SOURCE VOLTAGE : -V
DS
GS
= -10V
= -10V
Fig.8 Forward Transfer Admittance
V
2
GS
DRAIN-CURRENT : -I
V
V
V
Resistance vs. Drain Current( Ⅱ)
DRAIN-CURRENT : -I
GS
GS
GS
= -3.5V
vs. Drain Current
= -10V
= -4.5V
= -4.0V
0.1
V
4
GS
V
GS
= -2.5V
= -3.0V
1
6
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
3/5
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
Ta=25°C
Pulsed
D
D
[A]
8
[A]
DS
[V]
10
10
10
0.001
1000
0.01
100
0.01
0.1
0.1
10
10
10
1
1
Fig.6 Static Drain-Source On-State
0.1
0
0
V
Pulsed
V
Pulsed
V
Pulsed
GS
GS
Fig.3 Typical Transfer Characteristics
DS
Ta= - 25°C
Ta= 125°C
GATE-SOURCE VOLTAGE : -V
DRAIN-CURRENT : -I
SOURCE-DRAIN VOLTAGE : -V
Ta= 75°C
Ta= 25°C
= -4.5V
=0V
= -10V
Resistance vs. Drain Current( Ⅲ)
Fig.9 Reverse Drain Current
0.5
1
vs. Sourse-Drain Voltage
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
D
Ta=125°C
2
1
Ta=-25°C
[A]
Ta=75°C
Ta=25°C
2010.07 - Rev.B
GS
SD
[V]
Data Sheet
1.5
10
[V]
3