IRLML9303TRPBF International Rectifier, IRLML9303TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML9303TRPBF
• Description: MOSFET P-CH 30V 2.3A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML9303TRPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 165 mOhm @ 2.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 2.4V @ 10µA
• Gate Charge (qg) @ Vgs: 2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 160pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 270 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.3 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML9303TRPBF; IRLML9303TRPBFTR

Id
6
500
400
300
200
100
Fig 12. Typical On-Resistance vs.
Vgs
Fig 14a. Gate Charge Waveform
0
2
4
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
Qgodr
6
8
10
Qgd
12
T J = 25°C
T J = 125°C
Qgs2
14
I D = -2.3A
Vgs(th)
16
Vds
Qgs1
18
20
0
600
500
400
300
200
100
0
Fig 13. Typical On-Resistance vs.
Fig 14b. Gate Charge Test Circuit
0
20K
1K
Drain Current
5
-I D , Drain Current (A)
S
S
Vgs = -4.5V
DUT
10
L
Vgs = -10V
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15
VCC
20