IRFL024NPBF International Rectifier, IRFL024NPBF Datasheet - Page 6

• Manufacturer Part Number: IRFL024NPBF
• Description: MOSFET N-CH 55V 2.8A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 75 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 4 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 17.7 ns
• Gate Charge Qg: 12.2 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 13.4 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFL024NPBF

IRFL024NPbF
Fig 12b. Unclamped Inductive Waveforms
6
Fig 12a. Unclamped Inductive Test Circuit
I
AS
R G
10V
V DS
t p
I AS
D.U.T
t p
0.01 Ω
L
V
15V
(BR)DSS
DRIVER
+
-
V DD
A
500
400
300
200
100
Fig 12c. Maximum Avalanche Energy
0
25
Starting T , Junction Temperature ( C)
50
Vs. Drain Current
J
75
100
TOP
BOTTOM
www.irf.com
125
°
1.3A
2.2A
2.8A
I D
150