IRF7809AVTRPBF International Rectifier, IRF7809AVTRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7809AVTRPBF
• Description: MOSFET N-CH 30V 13.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7809AVTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 15A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 62nC @ 5V
• Input Capacitance (ciss) @ Vds: 3780pF @ 16V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 13.3 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 41 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7809AVPBFTR; IRF7809AVTRPBF; IRF7809AVTRPBFTR

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1000
1000
100
100
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
2.4
0.1
TOP
BOTTOM
V
V
T = 150 C
DS
J
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
2.6
GS
, Drain-to-Source Voltage (V)
, Gate-to-Source Voltage (V)
T = 25 C
J
°
1
2.8
2.5V
°
V
20µs PULSE WIDTH
3.0
20µs PULSE WIDTH
T = 25 C
DS
J
= 15V
10
°
3.2
3.4
100
1000
100
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM
I =
D
V
15A
DS
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
2.5V
IRF7809AVPbF
T , Junction Temperature ( C)
Vs. Temperature
, Drain-to-Source Voltage (V)
J
0
1
20
2.5V
40 60
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
10V
3
100