IRF7809AVTRPBF International Rectifier, IRF7809AVTRPBF Datasheet

MOSFET N-CH 30V 13.3A 8-SOIC

IRF7809AVTRPBF

Manufacturer Part Number
IRF7809AVTRPBF
Description
MOSFET N-CH 30V 13.3A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7809AVTRPBF.pdf (8 pages)

Specifications of IRF7809AVTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13.3A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
62nC @ 5V
Input Capacitance (ciss) @ Vds
3780pF @ 16V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
9 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
12 V
Continuous Drain Current
13.3 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
41 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7809AVPBFTR
IRF7809AVTRPBF
IRF7809AVTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRF7809AVTRPBF
Manufacturer:
SANKEN
Quantity:
3 572
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7809AVTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7809AVTRPBF
Quantity:
4 000
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
The IRF7809AV offers particulary low R
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high current
• 100% Tested for Rg
• Lead-Free
Absolute Maximum Ratings
Thermal Resistance
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
DS(on)
applications
, gate charge and Cdv/dt-induced turn-on immunity.
GS
≥ 4.5V)
T
T
T
T
A
A
L
L
= 25°C
= 90°C
= 25°C
= 90°C
DS(on)
and high
Symbol
T
J
R
R
V
V
, T
I
I
P
I
DM
I
SM
θJA
DS
GS
D
θJL
S
D
STG
DEVICE CHARACTERISTICS…
SO-8
R
Q
Q
Q
IRF7809A V
–55 to 150
DS
G
sw
oss
IRF7809AVPbF
(on)
13.3
14.6
±12
100
2.5
3.0
30
50
Max.
2.5
50
20
IRF7809AV
G
S
S
S
7.0mΩ
41nC
14nC
30nC
1
2
3
4
Top View
PD - 95212A
Units
°C/W
°C/W
8
7
6
5
°C
W
V
A
Units
A
D
D
D
D
A
A
08/23/05

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IRF7809AVTRPBF Summary of contents

Page 1

N-Channel Application-Specific MOSFETs • Ideal for CPU Core DC-DC Converters • Low Conduction Losses • Low Switching Losses • Minimizes Parallel MOSFETs for high current applications • 100% Tested for Rg • Lead-Free Description This new device employs advanced ...

Page 2

IRF7809AVPbF Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Current* Gate-Source Leakage I GSS Current* Total Gate Chg Cont FET Q G Total ...

Page 3

VGS TOP 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 100 2.5V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 100 ° T ...

Page 4

IRF7809AVPbF 6000 1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 2000 C oss 1000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE (THERMAL RESPONSE) ...

Page 6

IRF7809AVPbF 0.008 4.5V 0.007 0.006 10V 0.005 Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U. 50KΩ .2µF 12V ...

Page 7

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 8

IRF7809AVPbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES ...

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