IRF7811W International Rectifier, IRF7811W Datasheet

MOSFET N-CH 30V 14A 8-SOIC

IRF7811W

Manufacturer Part Number
IRF7811W
Description
MOSFET N-CH 30V 14A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7811W

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 15A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
33nC @ 5V
Input Capacitance (ciss) @ Vds
2335pF @ 16V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7811W
Q1057779

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• N-Channel Application-Specific MOSFETs
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
• 100% Tested for R
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811W has been optimized for all parameters
that are critical in synchronous buck converters including
R
The IRF7811W offers particulary low R
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Parameter
Maximum Junction-to-Ambientƒ
Maximum Junction-to-Lead
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
GS
≥ 4.5V)
G
T
T
T
T
A
A
L
L
DS(on)
= 90°C
= 25°C
= 90°C
= 25°C
and high Cdv/
HEXFET
Symbol
T
J
R
R
V
V
, T
I
I
P
I
DM
I
SM
®
θJA
DS
GS
D
θJL
S
D
STG
Power MOSFET for DC-DC Converters
SO-8
DEVICE CHARACTERISTICS…
R
Q
Q
Q
IRF7811W
–55 to 150
DS
G
oss
sw
(on)
±12
109
109
3.1
3.0
30
14
13
Max.
3.8
40
20
IRF7811W
10.1nC
9.0mΩ
IRF7811W
22nC
12nC
G
S
S
S
1
2
3
4
T o p V ie w
PD-94031D
Units
°C/W
°C/W
°C
W
V
A
8
7
6
5
Units
A
01/06/09
D
D
D
D
A
1

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IRF7811W Summary of contents

Page 1

... The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811W has been optimized for all parameters that are critical in synchronous buck converters including R , gate charge and Cdv/dt-induced turn-on immunity. ...

Page 2

... IRF7811W Electrical Characteristics Parameter Drain-to-Source BV DSS Breakdown Voltage Static Drain-Source R DS (on) on Resistance Gate Threshold Voltage V GS(th) Drain-Source Leakage I DSS Current Gate-Source Leakage I GSS Current Total Gate Chg Cont FET Q G Total Gate Chg Sync FET Q G Pre-Vth Q GS1 Gate-Source Charge ...

Page 3

... Fig 3. On-Resistance Vs. Gate Voltage www.irf.com 6 15A 16V 4.0 2 4. ° Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 4000 3000 2000 1000 0 6.0 6.5 7 Drain-to-Source Voltage (V) Fig 4. Typical Capacitance Vs. Drain-to-Source Voltage IRF7811W Total Gate Charge (nC 0V MHZ C iss = SHORTED C rss = oss = Ciss Coss Crss 10 100 3 ...

Page 4

... IRF7811W 100 ° 150 ° 20µs PULSE WIDTH 0.1 2.5 3.0 3.5 4 Gate-to-Source Voltage (V) GS Fig 5. Typical Transfer Characteristics 100 D = 0.50 10 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com ...

Page 5

... PPUQSDIU 'YÃ&!Ãb!'d %#%Ãb!$$d "YÃ !&Ãb$d 96U@Ã8P9@Ã`XX `Ã2ÃG6TUÃ9DBDUÃPAÃUC@Ã`@6S XXÃ2ÃX@@F ;;;; 6Ã2Ã6TT@H7G`ÃTDU@Ã8P9@  GPUÃ8P9@ GPBP IRF7811W DI8C@T HDGGDH@U@ST HDI H6Y HDI H6Y $"! %'' "$ &$ # (' ...

Page 6

... IRF7811W SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St ...

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