MOSFET N-CH 30V 35A 5X6 PQFN

IRFH5301TRPBF

Manufacturer Part NumberIRFH5301TRPBF
DescriptionMOSFET N-CH 30V 35A 5X6 PQFN
ManufacturerInternational Rectifier
SeriesHEXFET®
IRFH5301TRPBF datasheet
 

Specifications of IRFH5301TRPBF

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs1.85 mOhm @ 50A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C35AVgs(th) (max) @ Id2.35V @ 100µA
Gate Charge (qg) @ Vgs77nC @ 10VInput Capacitance (ciss) @ Vds5114pF @ 15V
Power - Max3.6WMounting TypeSurface Mount
Package / Case8-PQFN, 8-PowerQFNTransistor PolarityN-Channel
Resistance Drain-source Rds (on)2.9 mOhmsDrain-source Breakdown Voltage30 V
Gate-source Breakdown Voltage20 VContinuous Drain Current100 A
Power Dissipation110 WGate Charge Qg37 nC
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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1000
100
10
1
2.5V
≤ 60µs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
T J = 150°C
10
T J = 25°C
1
V DS = 15V
≤60µs PULSE WIDTH
0.1
1.5
2
2.5
3
3.5
V GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
V GS = 0V,
f = 1 MHZ
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10000
C iss
C oss
1000
C rss
100
1
10
V DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
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1000
VGS
TOP
10V
4.50V
4.00V
3.50V
3.25V
3.00V
100
2.75V
BOTTOM
2.50V
10
1
10
100
0.1
Fig 2. Typical Output Characteristics
1.8
I D = 50A
V GS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-60 -40 -20 0 20 40 60 80 100 120 140 160
4
4.5
5
Fig 4. Normalized On-Resistance Vs. Temperature
14
I D = 50A
12
10
8
6
4
2
0
100
0
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
VGS
TOP
10V
4.50V
4.00V
3.50V
3.25V
3.00V
2.75V
BOTTOM
2.50V
2.5V
≤ 60µs
PULSE WIDTH
Tj = 150°C
1
10
100
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
V DS = 24V
V DS = 15V
20
40
60
80
100
Q G , Total Gate Charge (nC)
3