IRF7492TRPBF International Rectifier, IRF7492TRPBF Datasheet

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IRF7492TRPBF

Manufacturer Part Number
IRF7492TRPBF
Description
MOSFET N-CH 200V 3.7A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7492TRPBF.pdf (8 pages)

Specifications of IRF7492TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
56nC @ 10V
Vgs(th) (max) @ Id
2.5V @ 250µA
Current - Continuous Drain (id) @ 25° C
3.7A
Drain To Source Voltage (vdss)
200V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
79 mOhm @ 2.2A, 10V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.7 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
39 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7492TRPBF
Manufacturer:
IR
Quantity:
20 000
l
Benefits
l
l
l
Thermal Resistance
Applications
Absolute Maximum Ratings
www.irf.com
V
V
I
I
I
P
dv/dt
T
T
Symbol
R
R
Notes  through † are on page 8
D
D
DM
J
STG
DS
GS
D
θJL
θJA
@ T
@ T
Effective C
App. Note AN1001)
and Current
High frequency DC-DC converters
Low Gate to Drain Charge to Reduce
Fully Characterized Capacitance Including
Fully Characterized Avalanche Voltage
@T
Switching Losses
A
A
A
= 25°C
= 70°C
= 25°C
OSS
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Drain Lead
Junction-to-Ambient
to Simplify Design, (See
Parameter
Parameter
„
GS
GS
@ 10V
@ 10V
G
S
S
S
V
200V
1
2
3
4
DSS
Top View
Typ.
300 (1.6mm from case )
–––
–––
HEXFET
79
8
7
6
5
-55 to + 150
mW
R
Max.
± 20
0.02
DS(on)
200
3.7
3.0
2.5
9.5
30
D
D
D
D
A
IRF7492
A
@V
®
GS
Power MOSFET
max
Max.
= 10V
20
50
SO-8
3.7A
Units
Units
W/°C
°C/W
I
V/ns
D
°C
W
V
V
A
1

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IRF7492TRPBF Summary of contents

Page 1

Applications High frequency DC-DC converters l Benefits Low Gate to Drain Charge to Reduce l Switching Losses Fully Characterized Capacitance Including l Effective C to Simplify Design, (See OSS App. Note AN1001) Fully Characterized Avalanche Voltage l and Current Absolute ...

Page 2

IRF7492 Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 150°C 10. 25°C 1. ...

Page 4

IRF7492 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss 1000 C ...

Page 5

T , Ambient Temperature (°C) A Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 ...

Page 6

IRF7492 100 10V Drain Current (A) Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. V 50KΩ GS .2µF 12V .3µF ...

Page 7

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOTES : 1. DIMENSIONING & TOLERANCING PER ...

Page 8

IRF7492 SO-8 Tape and Reel Dimensions are shown in millimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE ...

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