IRFR2405PBF International Rectifier, IRFR2405PBF Datasheet - Page 2

• Manufacturer Part Number: IRFR2405PBF
• Description: MOSFET N-CH 55V 56A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFR2405PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 34A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2430pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.016Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 56A
• Power Dissipation: 110W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
 Repetitive rating; pulse width limited by
‚ Starting T
ƒ I
Notes:
I
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
2
fs
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
(BR)DSS
R
max. junction temperature.
T
SD
J
G
eff.
≤ 175°C
≤ 34A, di/dt ≤ 190A/µs, V
= 25Ω, I
/∆T
J
J
Drain-to-Source Leakage Current
Effective Output Capacitance …
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 0.22mH
AS
= 34A.
Parameter
Parameter
DD
≤ V
(BR)DSS
J
,
= 25°C (unless otherwise specified)
… C
†
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
as C
––– 0.0118 0.016
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
oss
––– 0.052 –––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
Calculated continuous current based on maximum allowable
55
30
–––
–––
–––
–––
–––
–––
junction temperature. Package limitation current is 30A
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
2430 –––
2040 –––
while V
–––
–––
–––
–––
–––
–––
––– -200
130
470
100
350
350
–––
–––
–––
170
70
16
19
15
55
62
78
–––
–––
–––
250
200
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
56†
260
4.0
1.3
20
23
29
DS
220
93
is rising from 0 to 80% V
V/°C
nH
µA
nA
nC
ns
nC
pF
ns
Ω
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
GS
G
= 34A
= 34A
= 25°C, I
= 25°C, I
= 6.8Ω
= 0V, I
= 10V, I
= 10V, I
= 25V, I
= 55V, V
= 44V, V
= 20V
= -20V
= 44V
= 10V„
= 28V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
GS
GS
Conditions
= 34A, V
= 34A
DSS
= 250µA
= 34A
= 34A „
= 0V to 44V
= 1.0V, ƒ = 1.0MHz
= 44V, ƒ = 1.0MHz
= 0V
= 0V, T
www.irf.com
D
GS
= 1mA
J
= 150°C
= 0V „
G
G
S
+L
D
D
S
)
S
D