IRF530NSTRRPBF International Rectifier, IRF530NSTRRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF530NSTRRPBF
• Description: MOSFET N-CH 100V 17A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF530NSTRRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Input Capacitance (ciss) @ Vds: 920pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 90 m Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 3.8 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 25 ns
• Gate Charge Qg: 24.7 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 22 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
0.1
20
16
12
10
0.00001
8
4
0
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
75
100
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
125
°
t , Rectangular Pulse Duration (sec)
150
1
175
0.001
V
90%
10%
V
DS
GS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
r
≤ 0.1 %
J
≤ 1
0.01
DM
x Z
1
thJC
P
2
t
DM
d(off)
+ T
C
t
1
t
f
t
2
+
-
5
0.1