IRF8252PBF International Rectifier, IRF8252PBF Datasheet
IRF8252PBF
Specifications of IRF8252PBF
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IRF8252PBF Summary of contents
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... Description The IRF8252PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8252PbF has been optimized for parameters that are critical in synchronous buck operation and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications ...
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... IRF8252PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...
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... Fig 2. Typical Output Characteristics 1 25A 10V 1.4 1.2 1.0 0.8 0 -60 -40 - 100 120 140 160 Fig 4. Normalized On-Resistance IRF8252PbF VGS TOP 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.3V 2.3V ≤ 60µs PULSE WIDTH Tj = 150° Drain-to-Source Voltage ( Junction Temperature (° ...
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... IRF8252PbF 100000 0V MHZ C iss = SHORTED C rss = oss = 10000 C iss C oss C rss 1000 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 150°C 100 10 1.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 14 20A 12.0 10.0 8.0 6 ...
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... J τ τ 1 τ τ τ τ τ 1 τ τ τ Ci= τi/Ri Ci= τi/Ri 0.001 0.01 0 Rectangular Pulse Duration (sec) IRF8252PbF 250µ 100 125 150 Temperature ( °C ) τi (sec) Ri (°C/W) 0.02127 0.000002 0.02040 0.000006 0.21216 0.000082 0.79696 0.001560 6.31529 0.028913 τ ...
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... IRF8252PbF 25° GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 15V DRIVER D.U 20V 0.01 Ω Fig 14. Unclamped Inductive Test Circuit and Waveform 6 1000 900 20A 800 700 600 500 125°C 400 300 200 100 Starting Junction Temperature (°C) Fig 13. Maximum Avalanche Energy ...
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... DS V Re-Applied G + Voltage - Inductor Curent for Logic Level Devices ® HEXFET Power MOSFETs Fig 18b. Switching Time Waveforms IRF8252PbF P.W. Period D = Period V Body Diode Forward Current di/dt Diode Recovery dv/dt V Body Diode Forward Drop I Ripple ≤ for N-Channel d(on) ...
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... IRF8252PbF SO-8 Package Outline Dimensions are shown in milimeters (inches & !$Ãb dà ! " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $à ...
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... MAX. = 25Ω 20A. AS Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.07/2008 IRF8252PbF 12.3 ( .484 ) 11.7 ( .461 ) 14.40 ( .566 ) 12.40 ( .488 ) TAC Fax: (310) 252-7903 9 ...