IRF8252PBF International Rectifier, IRF8252PBF Datasheet - Page 3

• Manufacturer Part Number: IRF8252PBF
• Description: MOSFET N-CH 25V 25A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8252PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 25A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 53nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5305pF @ 13V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 25V
• On Resistance Rds(on): 2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 3.7 mOhms
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 25 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 35 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
1000
1000
0.01
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
1
V DS = 15V
≤ 60µs PULSE WIDTH
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 150°C
2.3V
2
1
≤ 60µs PULSE WIDTH
Tj = 25°C
3
T J = 25°C
10
TOP
BOTTOM
4
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
5
1000
100
0.1
1.6
1.4
1.2
1.0
0.8
0.6
10
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
Fig 4. Normalized On-Resistance
I D = 25A
V GS = 10V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
vs. Temperature
1
IRF8252PbF
2.3V
≤ 60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
VGS
10V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
100
3