IRF6614 International Rectifier, IRF6614 Datasheet - Page 5

• Manufacturer Part Number: IRF6614
• Description: MOSFET N-CH 40V DIRECTFET-ST
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6614

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12.7A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2560pF @ 20V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric ST
• Configuration: Single Dual Drain Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.3 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12.7 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Fall Time: 3.6 ns
• Minimum Operating Temperature: - 40 C
• Rise Time: 27 ns
• Lead Free Status / Rohs Status: No

Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
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100.0
10.0
60
50
40
30
20
10
1.0
0.1
0
25
0.2
V SD , Source-to-Drain Voltage (V)
50
T J , Junction Temperature (°C)
0.6
1.0
75
T J = 150°C
T J = 25°C
T J = -40°C
Fig 14. Maximum Avalanche Energy Vs. Drain Current
100
1.4
V GS = 0V
100
1.8
125
80
60
40
20
0
25
2.2
Starting T J , Junction Temperature (°C)
150
50
75
100
TOP
BOTTOM
Fig 13. Typical Threshold Voltage vs. Junction
125
2.5
2.0
1.5
1.0
0.5
1000
100
0.1
10
4.3A
6.4A
10.2A
-75
1
I D
Fig11. Maximum Safe Operating Area
0.01
Tc = 25°C
Tj = 175°C
Single Pulse
-50
150
V DS , Drain-toSource Voltage (V)
-25
Temperature
0.10
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
DC
0
25
1.00
10msec
50
I D = 250µA
100µsec
1msec
75
10.00
100 125
100.00
5
150