IRF6614 International Rectifier, IRF6614 Datasheet

IRF6614

Manufacturer Part Number

IRF6614

Description

MOSFET N-CH 40V DIRECTFET-ST

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6614.pdf (10 pages)

Specifications of IRF6614

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8.3 mOhm @ 12.7A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

12.7A

Vgs(th) (max) @ Id

2.25V @ 250µA

Gate Charge (qg) @ Vgs

29nC @ 4.5V

Input Capacitance (ciss) @ Vds

2560pF @ 20V

Power - Max

2.1W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric ST

Configuration

Single Dual Drain Dual Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

8.3 mOhms

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

12.7 A

Power Dissipation

2.1 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Fall Time

3.6 ns

Minimum Operating Temperature

- 40 C

Rise Time

27 ns

Lead Free Status / Rohs Status

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6614TR1PBF

Manufacturer:

International Rectifier

Quantity:

135

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6614TR1PBF

Manufacturer:

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF6614TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF6614TRPBF

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Company:

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Part Number:

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Quantity:

4 800

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6614 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal

resistance by 80%.

The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera-

tion of processors operating at higher frequencies. The IRF6614 has been optimized for parameters that are critical in synchronous

buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.

Notes:

www.irf.com

Absolute Maximum Ratings

Application Specific MOSFETs

Lead and Bromide Free

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching above 1MHz

Ideal for CPU Core and Telecom Synchronous

Rectification in DC-DC Converters

Optimized for Control FET socket of Sync. Buck Converter

Low Conduction Losses

Compatible with existing Surface Mount Techniques

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

2.0

Fig 1. Typical On-Resistance Vs. Gate Voltage

V GS , Gate-to-Source Voltage (V)

4.0

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

6.0

T J = 125°C

T J = 25°C

Ãg

8.0

I D = 12.7A

Parameter

10.0

@ 10V

„

…

†

40V max ±20V max 5.9mΩ@ 10V 7.1mΩ@ 4.5V

19nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

6.0nC

= 25°C, L = 0.43mH, R

I D = 10.2A

DirectFET™ Power MOSFET ‚

Q G Total Gate Charge (nC)

1.4nC

gs2

Max.

V DS = 32V

VDS= 20V

12.7

10.1

10.2

102

±20

DS(on)

5.5nC

= 25Ω, I

IRF6614

DirectFET™ ISOMETRIC

packaging to achieve

9.5nC

= 10.2A.

oss

DS(on)

Units

1.8V

gs(th)

5/3/06

Related parts for IRF6614

IRF6614 Summary of contents

Page 1

... The IRF6614 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest genera- tion of processors operating at higher frequencies ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation Peak Soldering Temperature P Operating Junction and Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 150° 25° -40°C ...

Page 5

150° 25° -40°C 1.0 0.1 0.2 0.6 1.0 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16b. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < 0.1% ...

Page 7

D.U.T + ƒ • • - • + ‚ - R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 8

DirectFET™ Outline Dimension, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS IMPERIAL METRIC CODE ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6614). For 1000 parts on 7" reel, order IRF6614TR1 CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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