IRF9540NSPBF International Rectifier, IRF9540NSPBF Datasheet

IRF9540NSPBF

Manufacturer Part Number

IRF9540NSPBF

Description

MOSFET P-CH 100V 23A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Type

Power MOSFETr

Datasheets

1.IRF9540NSTRRPBF.pdf (11 pages)

2.IRF9540NSPBF.pdf (4 pages)

Specifications of IRF9540NSPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

117 mOhm @ 14A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

23A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

110nC @ 10V

Input Capacitance (ciss) @ Vds

1450pF @ 25V

Power - Max

3.1W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Channel Type

Current, Drain

-23 A

Gate Charge, Total

97 nC

Package Type

D2Pak

Polarization

P-Channel

Power Dissipation

140 W

Resistance, Drain To Source On

0.117 Ohm

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

51 ns

Time, Turn-on Delay

15 ns

Transconductance, Forward

5.3 S

Voltage, Breakdown, Drain To Source

-100 V

Voltage, Drain To Source

–100 V

Voltage, Forward, Diode

-1.6 V

Voltage, Gate To Source

±20 V

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.117Ohm

Drain-source On-volt

100V

Gate-source Voltage (max)

±20V

Continuous Drain Current

23A

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

117 m Ohms

Drain-source Breakdown Voltage

- 100 V

Gate-source Breakdown Voltage

20 V

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

51 ns

Gate Charge Qg

64.7 nC

Minimum Operating Temperature

- 55 C

Rise Time

67 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF9540NSPBF

Manufacturer:

Quantity:

34 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF9540NSPBF

Manufacturer:

Quantity:

20 000

Current page: 1 of 11
Download datasheet (327Kb)

www.irf.com

Features of this design are a 150°C junction

operating temperature, fast switching speed and

improved repetitive avalanche rating . These fea-

tures combine to make this design an extremely

efficient and reliable device for use in a wide

variety of other applications.

Absolute Maximum Ratings

dv/dt

Thermal Resistance

STG

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

150°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Some Parameters are Different from

IRF9540NS/L

P-Channel

Lead-Free

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Continuous Drain Current, VGS @ -10V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mount, steady state)

Parameter

@ -10V

IRF9540NSPbF

Gate

Pak

300 (1.6mm from case )

Typ.

–––

-55 to + 150

Max.

Drain

110

± 20

-23

-14

-92

-14

-13

3.1

0.9

Max.

IRF9540NLPbF

1.1

TO-262

Source

Units

W/°C

°C/W

V/ns

°C

Ω

Related parts for IRF9540NSPBF

IRF9540NSPBF Summary of contents

Page 1

... E AR dv/dt Peak Diode Recovery dv/dt T Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance R Junction-to-Case θJC Junction-to-Ambient (PCB Mount, steady state) R θJA www.irf.com Pak IRF9540NSPbF G Gate Parameter @ -10V Parameter g D Ω TO-262 IRF9540NLPbF D S Drain Source Max ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -15V -10V -8.0V -7.0V 100 -6.0V -5.5V -5.0V BOTTOM -4. -4.5V ≤60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) 100 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C ...

Page 5

Case Temperature (° 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 www.irf.com ≤ ...

Page 6

D.U DRIVER -20V 0.01 Ω (BR)DSS Charge 6 350 V DD 300 A 250 200 150 15V 100 ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INTERNAT IONAL RECTIFIER F530S LOGO AS S EMBLY LOT CODE PART NUMBER ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 EMBLY LINE "C" Note: "P" in assembly ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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