IRF6725MTRPBF International Rectifier, IRF6725MTRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF6725MTRPBF
• Description: MOSFET N-CH 30V 28A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6725MTRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 54nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MX
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.2 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 170 A
• Power Dissipation: 100 W
• Gate Charge Qg: 36 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

‡
Notes:
IRF6725MPbF
∆ΒV
∆V
Static @ T
BV
R
V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
GS(th)
SD
DS(on)
Q
Q
Q
Q
G
iss
oss
rss
g
sw
oss
rr
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
GS(th)
DSS
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
g
gs2
+ Q
gd
)
Min. Typ. Max. Units
Min. Typ. Max. Units
1.35
–––
–––
–––
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
4700
14.9
0.77
–––
-6.1
–––
–––
–––
–––
–––
960
420
–––
–––
1.7
2.4
1.8
8.8
3.9
1.3
22
36
11
12
21
16
22
19
13
24
39
2.35
-100
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
130
220
2.2
3.2
1.0
2.2
1.0
54
36
59
mV/°C
mV/°C
mΩ
µA
nA
nC
nC
pF
nC
ns
ns
V
S
Ω
V
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 15
V
V
I
R
See Fig. 17
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 260A/µs
D
D
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
GS
DS
J
J
G
= 22A
= 22A
= 25°C, I
= 25°C, I
= 1.8Ω
= V
= 24V, V
= 24V, V
= 15V, I
= 15V
= 16V, V
= 15V
= 0V, I
= 10V, I
= 4.5V, I
= 20V
= -20V
= 4.5V
= 15V, V
= 0V
GS
, I
D
Conditions
D
Conditions
S
F
D
D
= 250µA
D
GS
GS
GS
GS
= 22A
= 22A, V
= 100µA
= 28A
= 22A
= 22A
= 0V
= 0V, T
= 0V
= 4.5V
i
i
D
i
GS
www.irf.com
= 1mA
J
= 125°C
i
= 0V
i