IRF640NSPBF International Rectifier, IRF640NSPBF Datasheet - Page 3

• Manufacturer Part Number: IRF640NSPBF
• Description: MOSFET N-CH 200V 18A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Current, Drain: 18 A
• Gate Charge, Total: 67 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 0.15 Ohm
• Resistance, Thermal, Junction To Case: 1 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 6.8 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF640NSPBF

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0.01
100
0.1
100
0.1
10
10
1
1
0.1
4.0
TOP
BOTTOM
T = 175 C
J
V
DS
5.0
V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
GS
, Drain-to-Source Voltage (V)
°
, Gate-to-Source Voltage (V)
T = 25 C
J
6.0
1
°
7.0
20µs PULSE WIDTH
T = 25 C
J
V
20µs PULSE WIDTH
DS
10
8.0
= 50V
°
4.5V
9.0
100
10.0
100
0.1
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
1
0.1
-60 -40 -20 0
TOP
BOTTOM
I =
D
18A
V
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
IRF640N/S/LPbF
20µs PULSE WIDTH
T = 175 C
J
10
4.5V
°
V
GS
°
=
10V
3
100