IRF640NSPBF International Rectifier, IRF640NSPBF Datasheet - Page 4

• Manufacturer Part Number: IRF640NSPBF
• Description: MOSFET N-CH 200V 18A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: N
• Current, Drain: 18 A
• Gate Charge, Total: 67 nC
• Package Type: D2Pak
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 0.15 Ohm
• Resistance, Thermal, Junction To Case: 1 °C/W
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 23 ns
• Time, Turn-on Delay: 10 ns
• Transconductance, Forward: 6.8 S
• Voltage, Breakdown, Drain To Source: 200 V
• Voltage, Drain To Source: 200 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF640NSPBF

IRF640N/S/LPbF
www.irf.com
100
2500
2000
1500
1000
0.1
10
500
1
0.2
0
1
T = 175 C
J
0.4
V
SD
V DS , Drain-to-Source Voltage (V)
Coss
Crss
°
,Source-to-Drain Voltage (V)
Ciss
0.6
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
10
0.8
T = 25 C
J
1.0
f = 1 MHZ
100
°
1.2
V
GS
1.4
= 0 V
1000
1.6
1000
100
0.1
10
1
0.1
20
16
12
8
4
0
T
T
Single Pulse
C
J
0
I =
= 25 C
= 175 C
D
OPERATION IN THIS AREA LIMITED
V
11A
DS
°
°
Q , Total Gate Charge (nC)
1
, Drain-to-Source Voltage (V)
G
20
BY R
V
V
V
10
DS(on)
40
DS
DS
DS
= 160V
= 100V
= 40V
100
60
10us
100us
1ms
10ms
4
1000
80