IRL2203NSTRLPBF International Rectifier, IRL2203NSTRLPBF Datasheet - Page 7

• Manufacturer Part Number: IRL2203NSTRLPBF
• Description: MOSFET N-CH 30V 116A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL2203NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 116A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 116 A
• Power Dissipation: 170 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 40 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRL2203NSTRLPBF; IRL2203NSTRLPBFTR

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Re-Applied
Voltage
Reverse
Recovery
Current
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-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
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For N-channel
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
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•
•
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Diode Recovery
Current
HEXFET
dv/dt
Forward Drop
•
•
•
di/dt
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power MOSFETs
D =
-
Period
„
P.W.
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[
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V
V
I
SD
GS
DD
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