IRL2203NSTRLPBF International Rectifier, IRL2203NSTRLPBF Datasheet

IRL2203NSTRLPBF

Manufacturer Part Number

IRL2203NSTRLPBF

Description

MOSFET N-CH 30V 116A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRL2203NSTRRPBF.pdf (10 pages)

Specifications of IRL2203NSTRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

7 mOhm @ 60A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

116A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 4.5V

Input Capacitance (ciss) @ Vds

3290pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

10 mOhms

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

16 V

Continuous Drain Current

116 A

Power Dissipation

170 W

Mounting Style

SMD/SMT

Gate Charge Qg

40 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRL2203NSTRLPBF
IRL2203NSTRLPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRL2203NSTRLPBF

Manufacturer:

Quantity:

19 000

Current page: 1 of 10
Download datasheet (291Kb)

Advanced HEXFET

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The D

die sizes up to HEX-4. It provides the highest power capability and the lowest

possible on-resistance in any existing surface mount package. The D

is suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRL2203NL) is available for low-profile applications.

Description

www.irf.com

dv/dt

Absolute Maximum Ratings

Thermal Resistance

STG

θJC

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

100% R

Lead-Free

Symbol

Pak is a surface mount power package capable of accommodating

= 25°C

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

Tested

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount, steady state)

Power MOSFETs from International Rectifier

Parameter

@ 10V

Pak

Typ

HEXFET

300 (1.6mm from case)

–––

IRL2203NSPbF

IRL2203NLPbF

-55 to + 175

116

Max

Pak

± 16

400

180

3.8

1.2

5.0

Power MOSFET

DS(on)

Max

0.85

DSS

IRL2203NLPbF

= 116A‡

PD - 95219A

TO-262

= 7.0mΩ

= 30V

Units

W/°C

°C/W

V/ns

°C

Related parts for IRL2203NSTRLPBF

IRL2203NSTRLPBF Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

VGS TOP 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 10 2.7V 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 1000 T = ...

Page 4

1MHz iss rss gd 5000 oss ds gd 4000 C iss 3000 C oss 2000 1000 C ...

Page 5

LIMITED BY PACKAGE 100 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 600 500 DRIVER 400 + ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

THIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 ASS EMBLY LINE "L" OR Notes: 1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/auto/ 2. For ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 ASS EMBLY LINE "C" OR Notes: 1. For an ...

Page 10

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 13.50 (.532) 12.80 (.504) 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION ...

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