IRF7665S2TRPBF International Rectifier, IRF7665S2TRPBF Datasheet
IRF7665S2TRPBF
Specifications of IRF7665S2TRPBF
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IRF7665S2TRPBF Summary of contents
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... M4 TM packaging technology. DirectFET Parameter @ 10V GS @ 10V GS @ 10V jà Parameter Typ. e ––– ––– 1.4 IRF7665S2TRPbF IRF7665S2TR1PbF Key Parameters 100 V m typ 10V 51 GS 8.3 nC typ. 3.5 DirectFET ISOMETRIC packaging technology offers lower TM package is Max. Units ...
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IRF7665S2TR/TR1PbF Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...
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VGS TOP 15V 10V 8.0V 10 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V 1 0.1 0.01 5.0V ≤ 60µs PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 ...
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IRF7665S2TR/TR1PbF 100 -40° 25° 175° 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward ...
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Vgs = 10V 280 240 200 125°C 160 120 25° Drain Current (A) Fig 12. On-Resistance vs. Gate Voltage 15V ...
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IRF7665S2TR/TR1PbF Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µ D.U. 3mA Current Sampling Resistors Fig 17a. Gate Charge Test Circuit + - Driver Gate Drive D.U.T. ...
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Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations www.irf.com IRF7665S2TR/TR1PbF GATE D = DRAIN S = SOURCE ...
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IRF7665S2TR/TR1PbF Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations DirectFET Part Marking 8 DIMENSIONS IMPERIAL METRIC CODE MAX MIN MIN MAX 4.85 A 4.75 0.187 0.191 B 3.70 3.95 0.146 0.156 2.85 0.108 C ...
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DirectFET Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts.IRF7665S2 IRF7665S2PbF REEL DIMENSIONS STANDARD OPTION (QTY 4800) METRIC IMPERIAL MIN CODE MIN MAX A 12.992 330.0 N.C B 20.2 N.C 0.795 ...