IRF520NPBF International Rectifier, IRF520NPBF Datasheet
IRF520NPBF
Specifications of IRF520NPBF
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IRF520NPBF Summary of contents
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... T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- srew Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA IRF520NPbF HEXFET TO-220AB Max. @ 10V GS @ 10V GS 0.32 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– ...
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... IRF520NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...
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... BOTTOM 4. 0.1 100 V , Drain-to-Source Voltage (V) DS Fig 2. Typical Output Characteristics 3 9.5A D 2.5 2.0 1.5 1.0 0.5 0 -60 -40 - Junction Temperature (°C) J Fig 4. Normalized On-Resistance Vs. Temperature IRF520NPbF 4.5V 20µs PULSE WIDTH T = 175° 100 V = 10V 100 120 140 160 180 ...
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... IRF520NPbF 600 1MHz iss rss gd 500 oss iss 400 C 300 oss 200 C rss 100 Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 175° 25° 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage SHORTED ds 16 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit V DS 90% 10% 150 175 ° d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRF520NPbF D.U. d(off ...
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... IRF520NPbF D.U. 0.01Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform 200 + 160 120 80 V (BR)DSS Starting T , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit ...
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... Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple ≤ for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRF520NPbF Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P.W. ...
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... IRF520NPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 1 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...