IRF520N International Rectifier, IRF520N Datasheet
IRF520N
Specifications of IRF520N
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IRF520N Summary of contents
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... Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA HEXFET TO-220AB Max. @ 10V GS @ 10V GS 0.32 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. ––– 0.50 ––– 91339A IRF520N ® Power MOSFET V = 100V DSS R = 0.20 DS(on 9.7A D Units 9.7 6 W/°C ± ...
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... IRF520N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 3. Typical Transfer Characteristics VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. 0 rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics 3 9 2.5 2.0 1.5 1.0 0.5 0 -60 -40 - unc tion T em perature (° Fig 4. Normalized On-Resistance Vs. Temperature IRF520N 4 .5V 2 0µ 5° ...
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... IRF520N iss oss rss rain-to -S ource V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 5° 5° 0.4 0.6 0.8 1 ourc e-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage ing lse A 0.1 1.2 1.4 1 Fig 8. Maximum Safe Operating Area = 5 FIG otal G ate C harge ( Fig 6 ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 10% 150 175 ° d(on) Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 t , Rectangular Pulse Duration (sec) 1 IRF520N D.U. µ d(off ...
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... IRF520N D.U. 0.01 Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate Charge Waveform (BR)DSS tarting unc tion T em perature (°C ) Fig 12c. Maximum Avalanche Energy Fig 13b. Gate Charge Test Circuit TTO Vs. Drain Current Current Regulator Same Type as D ...
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... Current Current D.U.T. V Waveform DS Diode Recovery Re-Applied Voltage Body Diode Inductor Curent Ripple for Logic Level Devices GS Fig 14. For N-Channel HEXFETS IRF520N Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + + controlled by Duty Factor "D" P. Period V =10V ...
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... IRF520N Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 10 .54 (.4 15) 10 .29 (.4 05) 2.87 (.11 3) 2.62 (. 5.24 (. 4.84 (. 4.09 (. 3. 2.54 (. & ING 4. 82 LIN Part Marking Information TO-220AB ITH WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...