IRF520N International Rectifier, IRF520N Datasheet - Page 3

• Manufacturer Part Number: IRF520N
• Description: MOSFET N-CH 100V 9.7A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF520N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520N

1 0 0
1 0 0
1 0
1 0
1
1
0.1
Fig 3. Typical Transfer Characteristics
4
Fig 1. Typical Output Characteristics
TOP
BOTTOM 4.5V
V
V
5
G S
15V
D S
VGS
10V
8.0V
7.0V
6.0V
5.5V
5.0V
, D rain-to-S ourc e V oltage (V )
, G ate-to -Source Volta ge (V )
T = 25 °C
J
1
6
7
V
2 0 µ s P U LS E W ID TH
20 µ s P U LS E W ID TH
T = 2 5°C
C
D S
T = 17 5 °C
J
4.5 V
1 0
= 5 0 V
8
9
1 0 0
1 0
A
A
1 0 0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1 0
1
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
Fig 2. Typical Output Characteristics
TOP
BOTTOM 4.5V
I
D
= 9.5 A
T , J unc tion T em perature (°C )
V
J
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Vs. Temperature
0
, D rain-to-S ource V oltage (V )
2 0
1
4 0
6 0
IRF520N
8 0
2 0µ s P U L S E W ID TH
T = 17 5°C
C
4 .5V
1 0 0 1 2 0 1 4 0 1 6 0 1 8 0
1 0
V
G S
= 1 0V
1 0 0
A
A