IXFA4N100P IXYS, IXFA4N100P Datasheet - Page 3

• Manufacturer Part Number: IXFA4N100P
• Description: MOSFET N-CH 1000V 4A D2PAK
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFA4N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1456pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 4
• Rds(on), Max, Tj=25°c, (?): 3.3
• Ciss, Typ, (pf): 1456
• Qg, Typ, (nc): 26
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 150
• Rthjc, Max, (ºc/w): 0.83
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
3.6
3.2
2.8
2.4
1.6
1.2
0.8
0.4
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
3.5
2.5
1.5
0.5
4
2
0
4
3
2
1
0
0
0
0
V
2
1
GS
Fig. 5. R
= 10V
1
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
4
2
6
2
3
DS(on)
8
4
10
Normalized to I
3
Drain Current
5
12
I
D
V
V
DS
DS
- Amperes
- Volts
14
- Volts
4
6
16
T
V
V
J
7
GS
GS
= 125ºC
5
D
= 10V
18
= 10V
8V
7V
= 2A Value vs.
6V
8
7V
5V
6V
5V
20
J
J
6
9
= 125ºC
= 25ºC
22
T
10
J
24
= 25ºC
7
11
26
12
28
8
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
4.5
3.5
2.5
1.5
0.5
8
7
6
5
4
3
2
1
0
4
3
2
1
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GS
-25
-25
Fig. 4. R
5
= 10V
Fig. 6. Maximum Drain Current vs.
0
0
DS(on)
10
Junction Temperature
Case Temperature
T
Normalized to I
T
C
25
25
J
- Degrees Centigrade
- Degrees Centigrade
15
V
DS
50
50
- Volts
V
GS
20
= 10V
8V
75
75
7V
6V
5V
D
I
= 2A Value vs.
IXFA4N100P
IXFP4N100P
D
= 4A
25
100
100
J
I
= 25ºC
D
30
125
125
= 2A
150
150
35