IXFA4N100P IXYS, IXFA4N100P Datasheet - Page 4

• Manufacturer Part Number: IXFA4N100P
• Description: MOSFET N-CH 1000V 4A D2PAK
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFA4N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1456pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 4
• Rds(on), Max, Tj=25°c, (?): 3.3
• Ciss, Typ, (pf): 1456
• Qg, Typ, (nc): 26
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 150
• Rthjc, Max, (ºc/w): 0.83
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
4.5
3.5
2.5
1.5
0.5
10
12
10
5
4
3
2
1
0
8
6
4
2
0
3.0
0.3
0
f
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
3.5
0.4
5
C rss
4.0
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
4.5
0.6
15
C oss
T
J
= 125ºC
V
V
V
DS
GS
SD
- Volts
0.7
5.0
- Volts
- Volts
20
C iss
T
J
= 125ºC
- 40ºC
25ºC
0.8
5.5
25
T
0.9
6.0
30
J
= 25ºC
1.0
6.5
35
1.1
7.0
40
0.01
4.5
3.5
2.5
1.5
0.5
0.1
16
14
12
10
0.00001
5
4
3
2
1
0
8
6
4
2
0
1
0
0
V
I
I
D
G
0.5
DS
Fig. 12. Maximum Transient Thermal Impedance
= 2A
= 10mA
= 500V
5
0.0001
1
10
1.5
Fig. 8. Transconductance
0.001
Fig. 10. Gate Charge
15
Q
Pulse Width - Seconds
2
G
I
D
- NanoCoulombs
- Amperes
0.01
2.5
20
T
J
= - 40ºC
3
25
0.1
IXFA4N100P
IXFP4N100P
25ºC
3.5
30
125ºC
IXYS REF: F_4N100P(45-744)10-08-08
4
1
35
4.5
40
10
5