IRF3710ZSTRLPBF International Rectifier, IRF3710ZSTRLPBF Datasheet

IRF3710ZSTRLPBF

Manufacturer Part Number

IRF3710ZSTRLPBF

Description

MOSFET N-CH 100V 59A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF3710ZSTRLPBF.pdf (13 pages)

Specifications of IRF3710ZSTRLPBF

Package / Case

D²Pak, TO-263 (2 leads + tab)

Mounting Type

Surface Mount

Power - Max

160W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

120nC @ 10V

Vgs(th) (max) @ Id

4V @ 250µA

Current - Continuous Drain (id) @ 25° C

59A

Drain To Source Voltage (vdss)

100V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

18 mOhm @ 35A, 10V

Transistor Polarity

N Channel

Continuous Drain Current Id

59A

Drain Source Voltage Vds

100V

On Resistance Rds(on)

18mohm

Rds(on) Test Voltage Vgs

10V

Peak Reflow Compatible (260 C)

Yes

Rohs Compliant

Yes

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

59 A

Power Dissipation

160 W

Mounting Style

SMD/SMT

Gate Charge Qg

82 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Features

Description

Specifically designed for Automotive applications,

this HEXFET

processing techniques to achieve extremely low

on-resistance per silicon area. Additional fea-

tures of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating . These features com-

bine to make this design an extremely efficient

and reliable device for use in Automotive applica-

tions and a wide variety of other applications.

HEXFET

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

STG

θJC

θCS

θJA

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

(tested)

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Power MOSFET utilizes the latest

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Junction-to-Ambient (PCB Mount, steady state)

Parameter

AUTOMOTIVE MOSFET

@ 10V (Silicon Limited)

@ 10V (See Fig. 9)

TO-220AB

IRF3710Z

300 (1.6mm from case )

See Fig.12a,12b,15,16

HEXFET

Typ.

0.50

–––

10 lbf•in (1.1N•m)

-55 to + 175

IRF3710ZS

Max.

240

160

± 20

170

200

1.1

Pak

IRF3710ZS

IRF3710ZL

Power MOSFET

Max.

DS(on)

0.92

–––

IRF3710Z

DSS

= 59A

PD - 94632A

= 100V

IRF3710ZL

= 18mΩ

TO-262

Units

W/°C

°C/W

°C

Related parts for IRF3710ZSTRLPBF

IRF3710ZSTRLPBF Summary of contents

Page 1

... Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance R Junction-to-Case θJC Case-to-Sink, Flat, Greased Surface R θCS R Junction-to-Ambient θJA R Junction-to-Ambient (PCB Mount, steady state) θJA ® HEXFET is a registered trademark of International Rectifier. www.irf.com AUTOMOTIVE MOSFET G TO-220AB IRF3710Z Parameter @ 10V (Silicon Limited 10V (See Fig Parameter ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current ...

Page 3

VGS TOP 15V 10V 8.0V 100 7.0V 6.0V 5.5V 5.0V 10 BOTTOM 4.5V 1 4.5V 0.1 20µs PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 10 ...

Page 4

0V MHZ iss rss = 10000 oss ds gd Ciss 1000 Coss 100 ...

Page 5

Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 6

D.U 20V GS 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms ...

Page 7

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-08 1.0E-07 Fig 15. Typical Avalanche Current vs.Pulsewidth 200 TOP Single Pulse BOTTOM 10% Duty Cycle 35A 150 100 ...

Page 8

SD • Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. ...

Page 9

Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 4 15.24 (.600) 14.84 (.584 14.09 (.555) 13.47 (.530) 1.40 (.055) 3X 1.15 (.045) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ...

Page 10

Dimensions are shown in millimeters (inches HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 ASS EMBLY LINE "L" 10 INT ERNAT IONAL RECT IFIER F530S LOGO AS ...

Page 11

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information www.irf.com IGBT 1- GATE 2- COLLECTOR 3- EMITTER 11 ...

Page 12

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL 10.90 (.429) 10.70 (.421) FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. ...

Page 13

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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