IXTQ182N055T IXYS, IXTQ182N055T Datasheet - Page 3

• Manufacturer Part Number: IXTQ182N055T
• Description: MOSFET N-CH 55V 182A TO-3P
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTQ182N055T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 182A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 4850pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohms
• Drain-source Breakdown Voltage: 55 V
• Continuous Drain Current: 182 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 55
• Id(cont), Tc=25°c, (a): 182
• Rds(on), Max, Tj=25°c, (?): 0.0050
• Ciss, Typ, (pf): 4850
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 70
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
200
180
160
140
120
100
200
180
160
140
120
100
2
1
80
60
40
20
80
60
40
20
0
0
0
0
0
Fig. 5. R
V
GS
40
0.1
0.2
= 10V
15V - - - -
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.2
0.4
80
vs. Drain Current
0.3
0.6
Normalized to I
120
I
D
V
V
- Amperes
DS
@ 150ºC
V
@ 25ºC
DS
0.4
0.8
GS
- Volts
- Volts
160
V
= 10V
GS
9V
8V
0.5
= 10V
1
9V
8V
200
D
0.6
6V
5V
1.2
7V
= 91A Value
7V
6V
5V
240
0.7
1.4
T
T
J
J
= 175ºC
= 25ºC
280
1.6
0.8
1.8
0.9
320
140
120
100
320
280
240
200
160
120
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
80
40
0
0
-50
-50
0
V
External Lead Current Limit for TO-263 (7-Lead)
GS
Fig. 6. Drain Current vs. Case Temperature
External Lead Current Limit for TO-3P, TO-220, & TO-263
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-25
-25
= 10V
9V
= 10V
1
0
0
DS(on)
vs. Junction Temperature
T
6V
T
8V
7V
5V
C
J
- Degrees Centigrade
- Degrees Centigrade
25
25
2
Normalized to I
V
DS
@ 25ºC
50
50
I
D
- Volts
= 182A
3
75
75
IXTQ182N055T
IXTH182N055T
100
100
D
4
I
D
= 91A Value
= 91A
125
125
5
150
150
175
175
6