IRF1405SPBF International Rectifier, IRF1405SPBF Datasheet - Page 11

MOSFET N-CH 55V 131A D2PAK

IRF1405SPBF

Manufacturer Part Number
IRF1405SPBF
Description
MOSFET N-CH 55V 131A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheets

Specifications of IRF1405SPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.3 mOhm @ 101A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
131A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
260nC @ 10V
Input Capacitance (ciss) @ Vds
5480pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Current, Drain
131 A
Gate Charge, Total
170 nC
Package Type
D2Pak
Polarization
N-Channel
Power Dissipation
200 W
Resistance, Drain To Source On
4.6 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
130 ns
Time, Turn-on Delay
13 ns
Transconductance, Forward
69 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5.3 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
131 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
110 ns
Gate Charge Qg
170 nC
Minimum Operating Temperature
- 55 C
Rise Time
190 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1405SPBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1405SPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF1405SPBF
Quantity:
95

ƒ
ˆ
www.irf.com
Dimensions are shown in millimeters (inches)
Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
For recommended footprint and soldering techniques refer to application note #AN-994.
2
This is applied to D
Repetitive rating; pulse width limited by
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
T
R
max. junction temperature. (See fig. 11).
Starting T
SD
J
G
≤ 175°C
≤ 101A, di/dt ≤ 210A/µs, V
= 25Ω, I
J
= 25°C, L = 0.11mH
AS
FEED DIRECTION
FEED DIRECTION
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
= 101A. (See Figure 12).
TRR
TRL
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
330.00
(14.173)
MAX.
1.85 (.073)
1.65 (.065)
DD
10.90 (.429)
10.70 (.421)
≤ V
13.50 (.532)
12.80 (.504)
(BR)DSS
This product has been designed and qualified for the industrial market.
4.10 (.161)
3.90 (.153)
,
1.60 (.063)
1.50 (.059)
Visit us at www.irf.com for sales contact information.07/2010
C
as C
Data and specifications subject to change without notice.
Calculated continuous current based on maximum allowable
Limited by T
oss
junction temperature. Package limitation current is 75A.
16.10 (.634)
15.90 (.626)
avalanche performance.
Qualification Standards can be found on IR’s Web site.
oss
eff. is a fixed capacitance that gives the same charging time
11.60 (.457)
11.40 (.449)
while V
1.75 (.069)
1.25 (.049)
1.60 (.063)
1.50 (.059)
Jmax
27.40 (1.079)
23.90 (.941)
26.40 (1.039)
24.40 (.961)
DS
15.42 (.609)
15.22 (.601)
4
is rising from 0 to 80% V
3
, see Fig.12a, 12b, 15, 16 for typical repetitive
30.40 (1.197)
0.368 (.0145)
0.342 (.0135)
60.00 (2.362)
MAX.
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
4
MIN.
TAC Fax: (310) 252-7903
DSS
.
11

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