IRF1010EZPBF International Rectifier, IRF1010EZPBF Datasheet
IRF1010EZPBF
Manufacturer Part Number
IRF1010EZPBF
Description
MOSFET N-CH 60V 75A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRF1010EZPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 mOhm @ 51A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
75A
Vgs(th) (max) @ Id
4V @ 100µA
Gate Charge (qg) @ Vgs
86nC @ 10V
Input Capacitance (ciss) @ Vds
2810pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
84 A
Gate Charge, Total
58 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
140 W
Resistance, Drain To Source On
6.8 Milliohms
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
38 ns
Time, Turn-on Delay
19 ns
Transconductance, Forward
200 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
84 A
Mounting Style
Through Hole
Gate Charge Qg
58 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRF1010EZPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF1010EZPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Features
Description
Specifically designed for Automotive applications,
this HEXFET
processing techniques to achieve extremely low
on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operat-
ing temperature, fast switching speed and im-
proved repetitive avalanche rating . These fea-
tures combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applica-
tions.
HEXFET
Absolute Maximum Ratings
I
I
I
I
P
V
E
E
I
E
T
T
Thermal Resistance
R
R
R
R
D
D
D
DM
AR
J
STG
D
GS
AS
AS
AR
θJC
θCS
θJA
θJA
@ T
@ T
@ T
@T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
(tested)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 25°C
®
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
AUTOMOTIVE MOSFET
Parameter
Parameter
GS
GS
GS
h
@ 10V (Silicon Limited)
@ 10V (See Fig. 9)
@ 10V
(Package Limited)
IRF1010EZPbF
G
i
TO-220AB
j
d
HEXFET
300 (1.6mm from case )
See Fig.12a,12b,15,16
IRF1010EZSPbF
Typ.
IRF1010EZLPbF
0.50
–––
–––
–––
IRF1010EZSPbF
10 lbf•in (1.1N•m)
S
D
IRF1010EZPbF
-55 to + 175
D
Max.
0.90
2
340
140
± 20
180
84
60
75
99
Pak
®
R
Power MOSFET
DS(on)
V
Max.
1.11
–––
62
40
DSS
I
D
IRF1010EZLPbF
= 75A
PD - 95483A
= 8.5mΩ
= 60V
TO-262
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1
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IRF1010EZPBF Summary of contents
Page 1
... HEXFET is a registered trademark of International Rectifier. AUTOMOTIVE MOSFET G TO-220AB IRF1010EZPbF Parameter @ 10V (Silicon Limited 10V (See Fig 10V (Package Limited Parameter 95483A IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF ® HEXFET Power MOSFET 60V DSS R = 8.5mΩ DS(on 75A Pak TO-262 IRF1010EZSPbF IRF1010EZLPbF Max ...
Page 2
Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient ––– DSS J R Static Drain-to-Source On-Resistance ––– DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source ...
Page 3
9 ...