IXTP1N100 IXYS, IXTP1N100 Datasheet - Page 4

• Manufacturer Part Number: IXTP1N100
• Description: MOSFET N-CH 1000V 1.5A TO-220AB
• Manufacturer: IXYS

Specifications of IXTP1N100

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 4.5V @ 25µA
• Gate Charge (qg) @ Vgs: 14.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 54W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 54 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 1.5
• Rds(on), Max, Tj=25°c, (?): 11
• Ciss, Typ, (pf): 480
• Qg, Typ, (nc): 23
• Trr, Typ, (ns): 710
• Pd, (w): 54
• Rthjc, Max, (k/w): 2.3
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
1000
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
3.5
0.4
0
f = 1MHz
5
0.5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
4
Fig. 9. Source Current vs.
Source-To-Drain Voltage
T
10
J
T
= 125ºC
J
= 125ºC
-40ºC
25ºC
0.6
V
V
15
4.5
V
G S
S D
D S
- Volts
- Volts
20
- Volts
0.7
5
25
0.8
30
T
J
5.5
C oss
C rss
C iss
= 25ºC
35
0.9
40
6
10.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.1
10
9
8
7
6
5
4
3
2
1
0
Fig. 13. Maxim um Transient Therm al
0
0
1
T
0.2
V
I
I
J
D
G
DS
2
Fig. 8. Transconductance
= -40ºC
= 1A
= 1mA
125ºC
25ºC
= 500V
0.4
Fig. 10. Gate Charge
Pulse Width - milliseconds
4
Q
Resistance
0.6
10
G
I
6
- nanoCoulombs
D
- Amperes
0.8
8
1
IXTP 1N100
IXTA 1N100
10
100
1.2
12
1.4
14
1.6
1000
1.8
16