IXTH90N15T IXYS, IXTH90N15T Datasheet - Page 2

• Manufacturer Part Number: IXTH90N15T
• Description: MOSFET N-CH 150V 90A TO247
• Manufacturer: IXYS

Specifications of IXTH90N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 4100pF @ 25V
• Power - Max: 455W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 90 A
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 4100
• Qg, Typ, (nc): 80
• Trr, Typ, (ns): 110
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Note 1:
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
(T
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
J
J
= 25°C, unless otherwise specified)
= 25°C unless otherwise specified)
*
: Current may be limited by external terminal current limit.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
TO-3P, TO-263, TO-247
V
Repetitive
I
I
V
Test Conditions
F
F
PRELIMINARY TECHNICAL INFORMATION
DS
GS
GS
GS
GS
R
G
= 50A, V
=45A, -di/dt = 250A/μs
= 75V, V
= 10V, I
= 3.3Ω (External)
= 10V, V
= 0V, V
= 15V, V
= 0V
GS
D
DS
GS
DS
= 0.5 • I
DS
= 0V, Note 1
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 25A
= 0.5 • I
5,049,961
5,063,307
5,187,117
D25
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
Characteristic Values
Min.
40
6,162,665
6,259,123 B1
6,306,728 B1
4100
560
0.25
0.21
110
Typ.
Typ.
92
24
22
44
19
80
20
20
69
0.33 °C/W
6,404,065 B1
6,534,343
6,583,505
300
Max.
1.2
90
Max.
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
6,683,344
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
6,710,405 B2 6,759,692
6,710,463
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2