IXTH90N15T IXYS, IXTH90N15T Datasheet - Page 6

• Manufacturer Part Number: IXTH90N15T
• Description: MOSFET N-CH 150V 90A TO247
• Manufacturer: IXYS

Specifications of IXTH90N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 4100pF @ 25V
• Power - Max: 455W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 90 A
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 4100
• Qg, Typ, (nc): 80
• Trr, Typ, (ns): 110
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100
22
21
20
19
18
17
16
90
80
70
60
50
40
30
20
10
32
30
28
26
24
22
20
18
16
14
12
0
20
2
25
Switching Times vs. Gate Resistance
Switching Times vs. Drain Current
I
t
T
V
35
D
30
r
J
DS
T
4
T
T
T
= 45A
Rise Time vs. Junction Temperature
= 125ºC, V
J
I
J
J
J
D
= 125ºC
= 125ºC
= 25ºC
= 25ºC
= 75V
Fig. 17. Resistive Turn-off
= 45A
Fig. 15. Resistive Turn-on
45
I
D
40
= 90A
Fig. 13. Resistive Turn-on
6
t
d(on)
I
55
T
GS
D
R
J
- Amperes
- Degrees Centigrade
- - - -
I
G
= 10V
D
50
8
- Ohms
= 90A
65
60
10
75
t
R
V
f
G
DS
= 3.3 Ω , V
= 75V
85
70
12
t
d(off)
95
GS
- - - -
80
14
= 10V
R
V
V
105
G
GS
DS
= 3.3 Ω
= 75V
= 10V
90
16
115
60
55
50
45
40
35
30
33
32
31
30
29
28
27
26
25
24
23
125
23
22
21
20
19
18
17
16
90
80
70
60
50
40
30
20
10
0
31
29
27
25
23
21
19
17
15
13
25
2
20
Switching Times vs. Junction Temperature
Switching Times vs. Gate Resistance
t
R
V
t
T
V
35
25
f
f
J
DS
G
DS
R
V
V
= 125ºC, V
4
= 3.3 Ω , V
G
GS
DS
= 75V
= 75V
30
= 3.3 Ω
45
= 75V
= 10V
Fig. 18. Resistive Turn-off
Fig. 16. Resistive Turn-off
T
35
Rise Time vs. Drain Current
J
t
d(off)
t
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
Fig. 14. Resistive Turn-on
6
55
- Degrees Centigrade
d(off)
GS
GS
40
- - - -
I
= 10V
R
- - - -
= 10V
D
65
G
= 45A, 90A
45
I
8
D
- Ohms
- Amperes
50
75
10
55
I
85
D
T
J
= 90A
60
= 25ºC
95
T
12
I
J
65
D
IXYS REF: T_90N15T(5G)8-08-07-A
= 125ºC
= 45A
105
70
14
75
115
80
125
16
110
100
90
80
70
60
50
40
30
20
85
65
60
55
50
45
40
35
30
90