IXTH3N100P IXYS, IXTH3N100P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTH3N100P
Manufacturer Part Number
IXTH3N100P
Description
MOSFET N-CH 1000V 3A TO-247
Specifications of IXTH3N100P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.8 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
39nC @ 10V
Input Capacitance (ciss) @ Vds
1100pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-247
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
3.0
Rds(on), Max, Tj=25°c, (?)
4.8
Ciss, Typ, (pf)
1100
Qg, Typ, (nc)
39
Trr, Typ, (ns)
820
Pd, (w)
125
Rthjc, Max, (k/w)
1.0
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
TO-247
V
V
V
V
V
Test Conditions
S
V
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 250μA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-220)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTA3N100P
IXTH3N100P
IXTP3N100P
-55 ... +150
-55 ... +150
Maximum Ratings
Characteristic Values
1.13 / 10
1000
Min.
2.5
1000
1000
±20
±30
200
125
150
300
260
2.5
3.0
6.0
10
3
6
3
Typ.
Nm/lb.in.
±50
250 μA
4.8
4.5
Max.
5 μA
V/ns
mJ
nA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
g
V
V
g
g
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
TO-247 (IXTH)
G = Gate
S = Source
Applications:
Features
Advantages
D25
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
DS(on)
Easy to mount
Space savings
High power density
DSS
G
G
D
D
G
S
S
= 1000V
= 3.0A
≤ ≤ ≤ ≤ ≤ 4.8Ω Ω Ω Ω Ω
S
D = Drain
TAB = Drain
(TAB)
(TAB)
(TAB)
DS99767A(4/08)
Related parts for IXTH3N100P
IXTH3N100P Summary of contents
... D = ±20V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTA3N100P IXTH3N100P IXTP3N100P Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ± 200 ≤ 150° 125 -55 ... +150 150 -55 ... +150 300 260 1. 2.5 3.0 6.0 Characteristic Values Min ...
... L 19.81 L1 ∅P 3.55 Q 5.89 R 4.32 S 6.15 BSC 6,404,065B1 6,683,344 6,727,585 6,534,343 6,710,405B2 6,759,692 6,583,505 6,710,463 6,771,478B2 7,071,537 IXTH3N100P 2 - Drain ∅ Inches Max. Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2.13 .065 .084 3 ...
... V = 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.0 2 10V GS 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTH3N100P 1.5A Value 1. 100 125 150 75 100 125 150 ...
... I - Amperes D Fig. 10. Gate Charge 500V 1. 1mA NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTH3N100P 40ºC J 25ºC 125ºC 2.5 3.0 3 IXYS REF: T_3N100P(3C)4-03-08-A ...
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