IXTH3N100P IXYS, IXTH3N100P Datasheet - Page 3

• Manufacturer Part Number: IXTH3N100P
• Description: MOSFET N-CH 1000V 3A TO-247
• Manufacturer: IXYS
• Series: PolarVHV™r

Specifications of IXTH3N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 3.0
• Rds(on), Max, Tj=25°c, (?): 4.8
• Ciss, Typ, (pf): 1100
• Qg, Typ, (nc): 39
• Trr, Typ, (ns): 820
• Pd, (w): 125
• Rthjc, Max, (k/w): 1.0
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.0
0
0
Fig. 5. R
2
V
0.5
1
GS
4
= 10V
2
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
6
DS(on)
3
1.5
8
vs. Drain Current
4
10
Normalized to I
2.0
I
D
V
V
DS
DS
- Amperes
5
12
@ 125ºC
@ 25ºC
2.5
- Volts
- Volts
14
6
3.0
T
16
V
J
7
GS
= 125ºC
3.5
V
18
= 10V
GS
8
7V
D
6V
5V
= 10V
5V
20
= 1.5A Value
4.0
6V
7V
T
9
J
= 25ºC
22
4.5
10
24
5.0
11
26
5.5
12
28
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-50
0
Fig. 4. R
V
2
GS
Fig. 2. Extended Output Characteristics
-25
-25
= 10V
4
Fig. 6. Maximum Drain Current vs.
6
DS(on)
vs. Junction Temperature
0
0
8
T
T
IXTA3N100P IXTP3N100P
C
J
Case Temperature
- Degrees Centigrade
10
- Degrees Centigrade
Normalized to I
25
25
V
12
DS
@ 25ºC
14
- Volts
I
50
50
D
16
= 3A
V
GS
18
= 10V
75
75
6V
5V
7V
20
D
IXTH3N100P
= 1.5A Value
I
22
100
100
D
= 1.5A
24
125
26
125
28
150
150
30