IXFH14N80P IXYS, IXFH14N80P Datasheet - Page 4

• Manufacturer Part Number: IXFH14N80P
• Description: MOSFET N-CH 800V 14A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH14N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 720 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 5.5V @ 4mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.72
• Ciss, Typ, (pf): 3900
• Qg, Typ, (nc): 61
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
20
18
16
14
12
10
100
8
6
4
2
0
45
40
35
30
25
20
15
10
10
5
0
3.5
0.3
0
f = 1 MHz
0.4
5
Fig. 9. Forward Voltage Drop of
4
0.5
10
Fig. 7. Input Admittance
Fig. 11. Capacitance
Intrinsic Diode
0.6
V
15
4.5
T
V
V
GS
J
SD
DS
= 125ºC
- 40ºC
- Volts
- Volts
25ºC
T
- Volts
0.7
J
20
= 125ºC
5
0.8
25
C iss
C oss
C rss
0.9
30
5.5
T
J
= 25ºC
35
1
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
1.1
40
6
1.000
0.100
0.010
30
27
24
21
18
15
12
10
9
6
3
0
9
8
7
6
5
4
3
2
1
0
0.0001
0
0
T
V
I
I
J
D
G
DS
2
= - 40ºC
= 7A
= 10mA
125ºC
=400V
Fig. 13. Maximum Transient Thermal
25ºC
10
IXFH 14N80P IXFQ 14N80P
0.001
4
Fig. 8. Transconductance
6
Fig. 10. Gate Charge
Q
20
Pulse Width - Seconds
G
I
- NanoCoulombs
D
0.01
8
- Amperes
Resistance
30
10
IXYS REF: F_14N80P (6J) 5-02-06.xls
0.1
12
40
14
50
1
16
18
60
10
20