IRFB33N15DPBF International Rectifier, IRFB33N15DPBF Datasheet - Page 3

• Manufacturer Part Number: IRFB33N15DPBF
• Description: MOSFET N-CH 150V 33A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB33N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 2020pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB33N15DPBF

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1000
100
0.1
1000
10
Fig 3. Typical Transfer Characteristics
100
Fig 1. Typical Output Characteristics
0.1
1
10
1
4
T = 175 C
0.1
J
TOP
BOTTOM
5
V
V
GS
°
DS
T = 25 C
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
6
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
°
7
1
8
V
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
T = 25 C
9
J
= 50V
10
10
4.5V
°
11
12
IRFB/IRFS/IRFSL33N15DPbF
100
1000
Fig 2. Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
33A
V
T , Junction Temperature ( C)
DS
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
1
4.5V
20µs PULSE WIDTH
T = 175 C
J
10
°
V
°
GS
=
10V
3
100