IRFB33N15DPBF International Rectifier, IRFB33N15DPBF Datasheet - Page 4

• Manufacturer Part Number: IRFB33N15DPBF
• Description: MOSFET N-CH 150V 33A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB33N15DPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 56 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 2020pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB33N15DPBF

IRFB/IRFS/IRFSL33N15DPbF
100000
10000
4
1000
100
1000
10
100
0.1
10
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 175 C
J
V
0.4
V DS , Drain-to-Source Voltage (V)
SD
Forward Voltage
,Source-to-Drain Voltage (V)
°
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
0.6
10
Coss
Ciss
Crss
0.8
T = 25 C
J
f = 1 MHZ
1.0
100
°
V
GS
1.2
SHORTED
= 0 V
1.4
1000
1000
20
16
12
100
8
4
0
Fig 8. Maximum Safe Operating Area
10
0
1
I =
D
1
Fig 6. Typical Gate Charge Vs.
T
T
Single Pulse
C
J
20A
= 25 C
= 175 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
20
Q , Total Gate Charge (nC)
DS
°
G
°
, Drain-to-Source Voltage (V)
10
40
V
V
V
BY R
DS
DS
DS
= 120V
= 75V
= 30V
DS(on)
FOR TEST CIRCUIT
60
SEE FIGURE
www.irf.com
100
10us
100us
1ms
10ms
80
13
1000
100