IRFB4229PBF International Rectifier, IRFB4229PBF Datasheet - Page 2

• Manufacturer Part Number: IRFB4229PBF
• Description: MOSFET N-CH 250V 46A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFB4229PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 46 mOhm @ 26A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4560pF @ 25V
• Power - Max: 330W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 46A
• Drain Source Voltage Vds: 250V
• On Resistance Rds(on): 38mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.046Ohm
• Drain-source On-volt: 250V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 46A
• Power Dissipation: 330W
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 30 V
• Mounting Style: Through Hole
• Gate Charge Qg: 72 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
t
t
t
t
t
E
C
C
C
C
L
L
E
E
V
I
I
I
V
t
Q
Electrical Characteristics @ T
Avalanche Characteristics
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
st
AS
S
SM
rr
fs
D
S
GS(th)
PULSE
AS
AR
DS(Avalanche)
SD
DS(on)
iss
oss
rss
oss
g
gd
rr
@ T
2
GS(th)
DSS
DSS
eff.
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
Ã
J
= 25°C (unless otherwise specified)
Ù
™
Min. Typ. Max. Units
Min. Typ. Max. Units
250
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
83
1390
4560
–––
210
–––
–––
–––
–––
–––
–––
–––
790
390
100
290
–––
–––
–––
190
840
-14
4.5
7.5
38
72
26
18
31
30
21
1260
-100
Typ.
–––
–––
–––
100
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
300
–––
180
290
5.0
1.0
1.3
46
20
46
mV/°C
mV/°C
mΩ
mA
nC
nH
nC
µA
nA
pF
ns
ns
µJ
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
R
See Fig. 22
V
L = 220nH, C= 0.3µF, V
V
L = 220nH, C= 0.3µF, V
V
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DD
DD
DD
DS
DS
GS
DS
GS
G
= 26A
= 25°C, I
= 25°C, I
= 2.4Ω
= V
= 250V, V
= 250V, V
= 25V, I
= 200V, R
= 200V, R
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 125V, I
= 125V, V
= 200V, V
= 0V
= 0V, V
GS
Max.
130
–––
33
26
, I
D
D
DS
S
F
Conditions
D
D
Conditions
= 250µA
= 26A, V
= 250µA
D
= 26A, V
= 26A
= 26A
GS
GS
GS
GS
G
G
= 0V to 200V
= 26A, V
= 4.7Ω, T
= 4.7Ω, T
e
= 0V
= 0V, T
= 10V
= 15V, R
e
D
GS
DD
= 1mA
www.irf.com
Ãe
GS
J
GS
GS
= 0V
= 50V
J
J
= 125°C
G
= 10V
Units
= 25°C
= 100°C
= 4.7Ω
= 15V
= 15V
G
mJ
mJ
V
A
e
e
S
D