IRFB4321PBF International Rectifier, IRFB4321PBF Datasheet

MOSFET N-CH 150V 83A TO-220AB

IRFB4321PBF

Manufacturer Part Number
IRFB4321PBF
Description
MOSFET N-CH 150V 83A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFB4321PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 33A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4460pF @ 50V
Power - Max
350W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
83A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
15mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
83 A
Power Dissipation
330 W
Mounting Style
Through Hole
Gate Charge Qg
71 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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Quantity:
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Quantity:
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www.irf.com
Applications
l
l
l
l
Benefits
l
l
l
l
I
I
I
P
V
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
l
D
D
DM
J
STG
D
GS
AS (Thermally limited)
@ T
@ T
JC
CS
JA
EMI Performance
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits
Performance
Low R
Low Gate Charge Improves the Switching
Improved Diode Recovery Improves Switching &
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
@T
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
DSON
Reduces Losses
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Junction-to-Case g
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient g
Parameter
Parameter
GS
GS
@ 10V
@ 10V
V
R
I
D
DSS
DS(on)
G
Gate
G
typ.
max.
Typ.
0.50
–––
–––
IRFB4321PbF
D
S
10lbxin (1.1Nxm)
-55 to + 175
Max.
85 c
Drain
HEXFET
330
350
120
300
2.3
±30
60
D
Max.
0.43
–––
12m :
15m :
D
62
®
150V
85A
Power MOSFET
TO-220AB
Source
S
Units
G
Units
W/°C
°C/W
mJ
D
°C
W
A
V
S
12/9/10
1

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IRFB4321PBF Summary of contents

Page 1

... Mounting torque, 6- screw Thermal Resistance Junction-to-Case Case-to-Sink, Flat, Greased Surface CS Junction-to-Ambient www.irf.com V DSS R DS(on Gate Parameter @ 10V GS @ 10V GS Parameter IRFB4321PbF ® HEXFET Power MOSFET 150V typ. 12m : 15m : max. 85A TO-220AB G D Drain Max 330 350 2.3 ±30 120 - 175 300 10lbxin (1 ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 100 6.5V 6.0V 5.5V BOTTOM 5. 60μs PULSE WIDTH 5. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

175° 25°C 1 0.1 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 90 LIMITED BY PACKAGE ...

Page 5

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 0.01 10 0.05 0.10 Allowed avalanche Current ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 100 200 300 400 500 600 700 800 900 1000 ...

Page 7

D.U.T + ƒ ‚ -  SD Fig 21 D.U 20V Fig 22a. Unclamped Inductive Test Circuit Pulse Width < 1μs Duty ...

Page 8

EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 2000 ASS EMBLY LINE "C" Note: "P" sembly line pos ition indicates "Lead - Free" TO-220AB packages are not recommended ...

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