IRFB4321PBF International Rectifier, IRFB4321PBF Datasheet - Page 6

• Manufacturer Part Number: IRFB4321PBF
• Description: MOSFET N-CH 150V 83A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4321PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 15 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4460pF @ 50V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 83A
• Drain Source Voltage Vds: 150V
• On Resistance Rds(on): 15mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 83 A
• Power Dissipation: 330 W
• Mounting Style: Through Hole
• Gate Charge Qg: 71 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 16. Threshold Voltage Vs. Temperature
40
30
20
10
0
-75 -50 -25
100 200 300 400 500 600 700 800 900 1000
T J , Temperature ( °C )
0
di f / dt - (A / μs)
25
50
I F = 50A
V R = 128V
T J = 125°C
T J = 25°C
75
100 125 150 175
I D = 1.0A
I D = 1.0mA
I D = 250μA
3200
2800
2400
2000
1600
1200
800
400
0
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / μs)
I F = 50A
V R = 128V
T J = 125°C
T J = 25°C
3200
2800
2400
2000
1600
1200
800
400
40
30
20
10
0
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
f
di f / dt - (A / μs)
di f / dt - (A / μs)
I F = 33A
V R = 128V
T J = 125°C
T J = 25°C
I F = 33A
V R = 128V
T J = 125°C
T J = 25°C
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