IRFB3006PBF International Rectifier, IRFB3006PBF Datasheet - Page 4

• Manufacturer Part Number: IRFB3006PBF
• Description: MOSFET N-CH 60V 195A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB3006PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.5 mOhm @ 170A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 195A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 8970pF @ 50V
• Power - Max: 375W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 270 A
• Power Dissipation: 375 W
• Mounting Style: Through Hole
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
300
250
200
150
100
1000
2.0
1.5
1.0
0.5
0.0
50
100
0.1
0
Fig 11. Typical C
10
1
25
0
0.0
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
50
10
V SD , Source-to-Drain Voltage (V)
V DS, Drain-to-Source Voltage (V)
T J = 175°C
0.4
T C , Case Temperature (°C)
Case Temperature
Forward Voltage
75
20
LIMITED BY PACKAGE
T J = 25°C
0.8
OSS
100
30
Stored Energy
1.2
125
40
V GS = 0V
150
1.6
50
175
2.0
60
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
10000
1000
1400
1200
1000
100
0.1
800
600
400
200
10
80
75
70
65
60
55
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
0.1
-60 -40 -20 0
25
Tc = 25°C
Tj = 175°C
Single Pulse
I D = 5mA
LIMITED BY PACKAGE
Starting T J , Junction Temperature (°C)
V DS , Drain-toSource Voltage (V)
50
T J , Junction Temperature (°C)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
20 40 60 80 100 120 140 160 180
75
100
100μsec
TOP
BOTTOM
10
125
DC
10msec
1msec
150
20A
27A
170A
I D
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100
175