IRF3703PBF International Rectifier, IRF3703PBF Datasheet - Page 8

• Manufacturer Part Number: IRF3703PBF
• Description: MOSFET N-CH 30V 210A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3703PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.8 mOhm @ 76A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 210A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 209nC @ 10V
• Input Capacitance (ciss) @ Vds: 8250pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 210 A
• Gate Charge, Total: 209 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 230 W
• Resistance, Drain To Source On: 2.3 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 53 ns
• Time, Turn-on Delay: 18 ns
• Transconductance, Forward: 150 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 0.8 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.8 m Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 210 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 24 ns
• Gate Charge Qg: 209 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 123 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3703PBF

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Notes:
Repetitive rating; pulse width limited by
R
I
T
8
Starting T
max. junction temperature.
SD
G
J
≤ 175°C
= 25Ω, I
≤ 76A, di/dt ≤ 100A/µs, V
J
AS
= 25°C, L = 0.6mH
NOTES:
= 76A.
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
E XAMPL E :
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T HE AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
DD
10.54 (.415)
10.29 (.405)
1
≤ V
2
3
(BR)DSS
4
This product has been designed and qualified for the industrial market.
3X
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
,
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
M
- A -
†
„
…
B A M
Visit us at www.irf.com for sales contact information.02/04
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
as C
Calculated continuous current based on maximum allowable
Data and specifications subject to change without notice.
junction temperature. Package limitation current is 75A
oss
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Qualification Standards can be found on IR’s Web site.
R E CT IF IE R
AS S E MB L Y
L OT CODE
eff. is a fixed capacitance that gives the same charging time
oss
L OGO
4.69 (.185)
4.20 (.165)
while V
DS
is rising from 0 to 80% V
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YEAR 7 = 1997
WE E K 19
L INE C
PAR T NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TAC Fax: [phone]
DSS
www.irf.com