IRF3703PBF International Rectifier, IRF3703PBF Datasheet

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... Junction and Storage Temperature Range J, STG Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient θJA Notes  through are on page 8 † www.irf.com IRF3703PbF SMPS MOSFET HEXFET V DSS 30V @ 10V GS @ 10V GS - 175 Typ. ––– 0.5 ––– ® Power MOSFET ...

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Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 1000 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 10000 ° ...

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1MHz iss 12000 rss oss ds gd 10000 C iss 8000 6000 C oss ...

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LIMITED BY PACKAGE 200 160 120 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 ...

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D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

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D.U.T + ‚ -  Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel www.irf.com + • • ƒ • - „ • • ...

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NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : ...

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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...