IXFJ13N50 IXYS, IXFJ13N50 Datasheet
IXFJ13N50
Manufacturer Part Number
IXFJ13N50
Description
MOSFET N-CH 500V 13A TO-220
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFJ13N50.pdf
(4 pages)
Specifications of IXFJ13N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
13
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2800
Qg, Typ, (nc)
110
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-268 (I3 - PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
S
V
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
£ I
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
DM
TM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 250 mA
DSS
= 2.5 mA
G
, V
= 0.5 • I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
£ V
J
J
(T
= 25°C
= 125°C
DSS
J
= 25°C, unless otherwise specified)
JM
,
min.
500
IXFJ 13N50
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
500
500
±20
±30
180
150
300
13
52
13
18
5
5
max.
±100
200
0.4
4
1 mA
V/ns
mJ
mA
°C
°C
°C
°C
W
nA
W
V
V
V
V
A
A
A
V
V
g
V
I
R
t
G = Gate,
S = Source,
Features
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• High power, low profile package
• Space savings
• High power density
D (cont)
rr
designs
rated
- easy to drive and to protect
power supplies
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 500 V
= 13 A
= 0.4 W
£ 250 ns
D = Drain,
TAB = Drain
TM
process
98578 (2/99)
(TAB)
é
1 - 4
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IXFJ13N50 Summary of contents
Page 1
... 0.8 • V DSS DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFJ 13N50 TM Family Maximum Ratings 500 = 1 MW 500 GS ±20 ± £ V ...
Page 2
... T = 25° 125° 25°C 0 125°C 1. 25° 125° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFJ 13N50 TO-268 Outline All metal area are ns solder plated 1 - gate 60 ns ...
Page 3
... I - Amperes D Figure 3. R normalized to 0.5 I DS(on) value 15.0 13N50 12.5 10.0 7.5 5.0 2.5 0.0 -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 10V 15V D25 75 100 125 150 IXFJ 13N50 25° ...
Page 4
... V - Volts DS Figure 9. Source Current vs. Source to Drain Voltage 1. 0 0 0.05 D=0.02 D=0.01 0.01 Single Pulse 0.00001 0.0001 © 2000 IXYS All rights reserved 100 10 0.1 75 100 0.001 0.01 Time - Seconds Figure 11. Transient Thermal Resistance IXFJ 13N50 Limited by R DS(on 100 ...