IXFJ13N50 IXYS, IXFJ13N50 Datasheet - Page 2

• Manufacturer Part Number: IXFJ13N50
• Description: MOSFET N-CH 500V 13A TO-220
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFJ13N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 13 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 13
• Rds(on), Max, Tj=25°c, (?): 0.4
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 179
• Rthjc, Max, (ºc/w): 0.70
• Package Style: TO-268 (I3 - PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
F
DS
GS
= I
I
-di/dt = 100 A/ms,
V
F
= 0 V
S
= 10 V; I
V
V
I
V
R
D
, V
= I
GS
GS
GS
= 0.5 • I
= 100 V
GS
S
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 I
D25
, R
DS
DS
DS
G
= 25 V, f = 1 MHz
D25
= 4.7 W (External)
= 0.5 • V
= 0.5 • V
, pulse test
T
T
T
T
T
T
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
J
J
J
J
J
J
DSS
DSS
(T
(T
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
,
, I
J
J
JM
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
= 0.5 • I
4,881,106
4,931,844
D25
min.
min.
7.5
Characteristic Values
Characteristic Values
5,017,508
5,034,796
2800
1.25
typ.
typ.
0.25
300
110
0.6
9.0
15
70
18
27
76
32
15
40
9
max.
max.
100
120
0.7
30
40
60
25
50
250
350
5,049,961
5,063,307
1.5
13
52
K/W
K/W
nC
nC
nC
mC
mC
pF
pF
pF
ns
ns
ns
ns
ns
ns
S
A
A
V
A
A
5,187,117
5,237,481
TO-268 Outline
Dim.
A
A1
b
b2
C
C2
D
D1
E
E1
e
H
L
L1
L2
5,486,715
5,381,025
Min
.193
.106
.045
.075
.016
.057
.543
.488
.624
.524
.215 BSC
1.365
.780
.079
.039
Inches
IXFJ 13N50
All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
Max
.201
.114
.057
.083
.026
.063
.551
.500
.632
.535
1.395 34.67 35.43
.800
.091
.045
Min
4.90
2.70
1.15
1.90
.040
1.45
13.80 14.00
12.40 12.70
15.85 16.05
13.30 13.60
5.45 BSC
19.81 20.32
2.00
1.00
Millimeters
Max
5.10
2.90
1.45
2.10
.065
1.60
2.30
1.15
2 - 4