IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet

IRFB4310PBF

Manufacturer Part Number

IRFB4310PBF

Description

MOSFET N-CH 100V 130A TO-220AB

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRFS4310TRRPBF.pdf (12 pages)

2.IRFB4310PBF.pdf (3 pages)

Specifications of IRFB4310PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

7 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

130A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

250nC @ 10V

Input Capacitance (ciss) @ Vds

7670pF @ 50V

Power - Max

300W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Current, Drain

130 A

Gate Charge, Total

170 nC

Package Type

TO-220AB

Polarization

N-Channel

Power Dissipation

300 W

Resistance, Drain To Source On

5.6 Milliohms

Temperature, Operating, Maximum

+175 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

68 ns

Time, Turn-on Delay

26 ns

Transconductance, Forward

160 S

Voltage, Breakdown, Drain To Source

100 V

Voltage, Forward, Diode

1.3 V

Voltage, Gate To Source

±20 V

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

140 A

Mounting Style

Through Hole

Gate Charge Qg

170 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

*IRFB4310PBF

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB4310PBF

Manufacturer:

Quantity:

35 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRFB4310PBF

Manufacturer:

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFB4310PBF

Company:

H&T Electronics

Part Number:

IRFB4310PBF

Quantity:

5 000

Company:

H&T Electronics

Part Number:

IRFB4310PBF

Quantity:

1 000

Current page: 1 of 12
Download datasheet (377Kb)

Applications

www.irf.com

Benefits

dV/dt

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

θJC

θCS

θJA

@ T

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

SOA

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Junction-to-Case

Case-to-Sink, Flat Greased Surface , TO-220

Junction-to-Ambient, TO-220

Junction-to-Ambient (PCB Mount) , D

Parameter

Ã™

@ 10V

Pak

IRFB4310PbF

TO-220AB

See Fig. 14, 15, 22a, 22b,

Typ.

0.50

–––

DSS

DS(on)

10lb

-55 to + 175

IRFS4310PbF

in (1.1N

130

Max.

HEXFET Power MOSFET

550

300

± 20

300

980

2.0

™

Pak

typ.

max.

IRFSL4310PbF

IRFB4310PbF

IRFS4310PbF

Max.

0.50

–––

5.6m

7.0m

IRFSL4310PbF

100V

130A

TO-262

Units

W/°C

°C/W

V/ns

°C

01/31/06

Related parts for IRFB4310PBF

IRFB4310PBF Summary of contents

Page 1

... R Case-to-Sink, Flat Greased Surface , TO-220 θCS R Junction-to-Ambient, TO-220 θJA R Junction-to-Ambient (PCB Mount θJA www.irf.com G TO-220AB IRFB4310PbF Parameter @ 10V GS @ 10V Ã™ g Parameter Pak IRFB4310PbF IRFS4310PbF IRFSL4310PbF HEXFET Power MOSFET D V 100V DSS R typ. 5.6m DS(on) max. 7.0m I 130A Pak IRFS4310PbF IRFSL4310PbF Max. ™ ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 8.0V 6.0V 5.5V 5.0V 100 4.8V BOTTOM 4.5V 10 ≤ 60µs PULSE WIDTH 4. 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 T J ...

Page 4

175°C 100.0 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 140 120 Limited By Package 100 80 ...

Page 5

D = 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 100 Duty Cycle = Single Pulse 10 Allowed avalanche Current vs avalanche ...

Page 6

Temperature ( °C ) Fig 16. Threshold Voltage Vs. Temperature 45A 85V ...

Page 7

D.U.T + ƒ ‚ - R • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ...

Page 8

TO-220AB packages are not recommended for Surface Mount Application. 8 www.irf.com ...

Page 9

TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information @Y6HQ @) UCDTÃDTÃ6IÃDS " " PUÃ8P9@Ã &'( 6TT@H7 @9ÃPIÃXXÃ (Ã ((& DIÃUC@Ã6TT@H7 `Ã DI@ÃÅ8Å www.irf.com DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` PUÃ8P9@ 5 DIU@SI6UDPI6 S@8UDAD@S PBP 6TT@H7 ` ...

Page 10

UCDTÃDTÃ6IÃDSA$"TÃXDUC GPUÃ8P @Ã'!# 6TT@H7G@ ÃPIÃXXÃ!Ã! DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅGÅ DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPUÃ8P @ DIU@SI6UDPI6G S@8UDAD@S A$"T GPBP 6TT@H7G` GPUÃ8P @ Q6SUÃIVH7@S A$"T 6U@Ã8P @ `@6SÃÃ2Ã! X@@FÃ! GDI@ÃG Q6SUÃIVH7@S 6U@Ã8P @ QÃ2Ã @TDBI6U@TÃG@6 ÃÃAS@@ QSP V8UÃPQUDPI6G `@6SÃÃ2Ã! X@@FÃ! ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. IR WORLD HEADQUARTERS: 233 ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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