IRFB4310PBF International Rectifier, IRFB4310PBF Datasheet - Page 3

• Manufacturer Part Number: IRFB4310PBF
• Description: MOSFET N-CH 100V 130A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFB4310PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 75A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 130A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 7670pF @ 50V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Current, Drain: 130 A
• Gate Charge, Total: 170 nC
• Package Type: TO-220AB
• Polarization: N-Channel
• Power Dissipation: 300 W
• Resistance, Drain To Source On: 5.6 Milliohms
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 68 ns
• Time, Turn-on Delay: 26 ns
• Transconductance, Forward: 160 S
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 140 A
• Mounting Style: Through Hole
• Gate Charge Qg: 170 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFB4310PBF

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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
12000
10000
8000
6000
4000
2000
1000
1000
100
100
10
10
0
1
1
Fig 3. Typical Transfer Characteristics
0.1
3.0
1
Fig 1. Typical Output Characteristics
T J = 175°C
TOP
BOTTOM
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
4.0
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1
Ciss
5.0
Coss
Crss
V DS = 50V
≤ 60µs PULSE WIDTH
T J = 25°C
≤ 60µs PULSE WIDTH
Tj = 25°C
f = 1 MHZ
10
6.0
10
7.0
100
8.0
100
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
10
8
4
0
-60 -40 -20 0
0.1
0
Fig 2. Typical Output Characteristics
I D = 75A
TOP
BOTTOM
I D = 75A
V GS = 10V
40
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
80
V DS = 80V
VDS= 50V
VDS= 20V
1
20 40 60 80 100 120 140 160 180
4.5V
120
≤ 60µs PULSE WIDTH
Tj = 175°C
160
10
200
240
280
100
3